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Accueil du site > Divers > Equipe 2-HOPE Equipe > Adrian DAVID

Adrian DAVID

16 décembre 2014

Adrian DAVID

Maitre de conférence UCBN (Assoc. Prof.)



Contact :
Tel : +33.2.31.45.26.08
Fax : +33.2.31.95.16.00
e-mail : adrian.david@ensicaen.fr


Curriculum Vitae

- 2013 - present : Assoc. Prof. (UCBN – CRISMAT lab)

- 2012 - 2013 : Lecturer UCBN-CRISMAT

- 2011- 2012, Research fellow Nanyang Technological University, Singapore.

- 2010 : PhD in Materials Science, University of Caen, France.

Research Interests

structure-property interrelationship of oxides, structural determination of thin films by diffraction techniques.

- Thin film growth by pulsed laser deposition of oxides compounds.

- Supperlattices heterostructures, RHEED analysis

- Non-conventional substrates

- SEM, TEM, XRD techniques

Publications

Emergent vortices at a ferromagnetic superconducting oxide interface
A.P. Petrovic, A. Pare, T.R.Paudel, K. Lee, S. Holmes, C.H.W. Barnes, A.David, T. Wu,E.Y.
Tsymbal and C.Panagopoulos. New Journal of Physics, 16, 103012, 2014.

Long-range electronic reconstruction to a dxz,yzdominated Fermi surface below the LaAlO3SrTiO3 interface
A.P. Petrovic, A. Pare, T.R.Paudel, K. Lee, S. Holmes, C.H.W. Barnes, A.David, T. Wu,E.Y.
Tsymbal and C.Panagopoulos. Scientific Reports, 4, 5338, 2014.

Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates
J.Park, Y.A. Soh, G. Aeppli, W.N. Lin, A. David, T. Wu.
Applied Physics Letters, 104, 081604, 2014.

BiFeO3/La0.7Sr0.3MnO3 heterostructures deposited on spark plasma sintered LaAlO3 substrates
D. Pravarthana, M.Trassin, J.H. Chu, M.Lacotte, A. David,R. Ramesh, P.A. Salvador and W. Prellier.
Applied Physics Letters, 104, 8, 082914, 2014.

Nonvolatile Resistive Switching in Pt/LaAlO3/SrTiO3 Heterostructures
S.X. Wu, X. Luo, S. Turner, H.Y. Peng, W.N. Lin, J.F. Ding, A. David, B.A. Wang, G. Van Tendeloo, J.L. Wang, T. Wu,
Physical Review X, 3, 041027, 2013.

Effects of electrode material and configuration on the characteristics of planar resistive switching devices 
H.Y. Peng, L. Pu, J.C. Wu, D. Cha, J.H. Hong, W.N. Lin, Y.Y. Li, J.F. Ding, A. David, K. Li, T. Wu.
Applied Physics Letters Materials, 1, 052106, 2013.
Anomalous exchange bias at collinear/noncollinear spin interface
Y.F. Tian, J.F. Ding, W.N. Lin, Z.H. Chen, A. David, M.He, W.J. Hu, L. Chen, T. Wu.
Scientific Reports, 3, 1094, 2013.

Domain-related origin of magnetic relaxation in compressively strained manganite thin films
S. R. Bakaul, B. F. Miao, W. Lin, W. Hu, A. David, H. F. Ding and T. Wu.
Applied Physics Letters, 101, 012408, 2012.

Incipient ferroelectricity in 2.3%tensile-strained CaMnO3 films
T. Gunter, E. Bousquet, A. David, Ph. Boullay,P. Ghosez,W. Prellier,M.Fiebig
Physical Review B 85, 214120, 2012.

Optical spectroscopic investigation of the carrier dynamic responses of LaVO3/SrVO3 superlattices
D. W. Jeong, Woo Seok Choi, T D Kang, C. H. Sohn, A. David, A. A. Sirenko, C H Lee, Jae Hoon Kim, Wilfrid Prellier , Y.-J. Kim , Yun Sang Lee and T. W. Noh.
Physical Review. B 84, 115132, 2011.

Structural transition in LaVO3/SrVO3 superlattices and its influence on transport properties
A.David, R.Frésard, Ph.Boullay, W.Prellier, U.Lüders and P-E Janolin.
Applied Physics Letters 98, 212106, 2011.

Microstructure and interface studies of LaVO3/SrVO3 superlattices
Ph.Boullay, A.David, W.C.Sheets, U.Lüders, W.Prellier, H Tan, J Verbeeck, G Van Tendeloo, C Gatel, G Vincze and Z Radi.
Physical Review B 83, 125403, 2011.

Microstructure of epitaxial strained BiCrO3 thin films
A.David, Ph.Boullay, R.V.K.Mangalam, N.Barrier and W.Prellier.
Applied Physics Letters 96,221904, 2010.

Constrained ferroelectric domain orientation in (BiFeO3)m(SrTiO3)n superlattices
R.Ranjith, RVK.Mangalam, Ph Boullay, A.David, MB.Lepetit, U.Lüders, W.Prellier, A.DaCosta, A.Ferri, G.Vincze, Z.Radi, and C.Aruta.
Applied Physics Letters 96, 022902, 2010.

Room-temperature magnetism in LaVO3/SrVO3 superlattices by geometrically confined doping
U.Luders, W.C.Sheets, A.David, W.Prellier and R.Frésard.
Physical Review B 80, 241102(R), 2009.