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Accueil du site > Vie du Laboratoire > Archives > Archives 2010 "Actualités"

Archives 2010 "Actualités"

Sujet(s) Post-doctorant

Laboratory : CRISMAT UMR 6508 CNRS/ENSICAEN - CAEN - France

 Enhancement of the surface capacitance in capacitive devices

Contact : ulrike luders

The Laboratoire de Cristallographie et Sciences de Matériaux at Caen (France), offers a 20months post-doctoral position. This position is funded in the framework of the Marie Curie Initial Training Network SOPRANO. Application is open from now on to the 15/01/2010. Applicants should have obtained their Master degree less than 5 years ago, and defended a PhD in Materials Science or related areas. The selection rules of the Marie Curie actions apply, i.e. the applicant should not be of French nationality and should not have stayed in France more than 12months during the last three years.

The miniaturization of capacitive devices is a major issue in microelectronics industry. The CRISMAT is part of a French industrial-public research program with the aim to develop new materials allowing for the enhancement of the surface capacitance in capacitors, based on binary oxides. Our role in this project is middle-term research to demonstrate the potential of new systems, for which two principal approaches will be used : the enhancement of the dielectric constant of binary oxide composite materials, and the deposition of simple binary oxides on substrates with high aspect ratios.
The post-doctoral fellow will investigate the electric properties of different binary oxide thin films, prepared by Pulsed Laser Deposition (PLD) and later on by Metalorganic chemical vapour deposition (MOCVD). The special focus will be on the optimisation of the dielectric constant, as well as the understanding of the mechanisms involved in the determination of the break-down voltage and the leaking currents.
The CRISMAT is a laboratory largely dedicated to the research on oxide functional materials. The available equipment allows the growth of the thin films by PLD, as well as the structural and electric characterisation of the samples. Lithography facilities are present, too.
The ideal candidate has a strong background in the growth and characterization of thin oxide films, if possible with MOCVD. Also, experience in the electric characterisation of dielectric materials is requested. 

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